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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL312FP DESCRIPTION *Collector-Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) *Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A *Very High Switching Speed APPLICATIONS *Designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 1150 500 9 UNIT V V Collector Current-Continuous Collector Current-peak tp<5ms Base Current-Continuous ww w scs .i 5 10 3 4 36 150 -65~150 V .cn mi e A A A A W IBM PC Ti Tstg Base Current-peak tp<5ms Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-A PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 3.5 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE(sat)-3 ICES ICEO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 100mA; L= 25mH IE= 10mA; IC= 0 IC= 1A; IB= 0.2A B BUL312FP MIN 500 9 TYP. MAX UNIT V V 0.5 0.7 1.1 1.0 1.1 1.2 1.0 2.0 0.25 V V V V V V mA mA IC= 2A; IB= 0.4A B IC= 3A; IB= 0.6A B IC= 1A; IB= 0.2A B IC= 2A; IB= 0.4A B Switching Times, Inductive Load ts tf Storage Time Fall Time ww w scs .i B IC= 3A; IB= 0.6A VCE=1150V; VBE= 0 VCE=1150V; VBE= 0, TC= 125 VCE= 500V; IB= 0 .cn mi e 8 10 IC= 10mA; VCE= 5V IC= 3A; VCE= 2.5V IC= 2A; VCL= 250V; L= 200H; IB1= 0.4A; VBE(off)= -5V; RBB= 0 1.9 0.16 s s isc Websitewww.iscsemi.cn |
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